Ụdị mgbawa ebe nchekwa ferroelectric nke dabeere na hafnium nke Liu Ming, bụ Academician Institute of Microelectronics, ewepụtala na IEEE International Solid-State Circuits Conference (ISSCC) na 2023, ọkwa kachasị elu nke nhazi sekit jikọtara ọnụ.
Ebe nchekwa na-adịghị agbanwe agbanwe (eNVM) dị elu na-achọsi ike maka ibe SOC na ngwa eletrọnịkị ndị ahịa, ụgbọ ala kwụụrụ onwe ya, njikwa ụlọ ọrụ na ngwaọrụ ihu maka ịntanetị nke ihe.Ebe nchekwa Ferroelectric (FeRAM) nwere uru nke ntụkwasị obi dị elu, oriri ike dị ala, yana oke ọsọ.A na-eji ya eme ihe n'ọtụtụ ndekọ data ozugbo, ịgụ na ide data ugboro ugboro, ike dị ala yana ngwaahịa SoC/SiP agbakwunyere.Ebe nchekwa Ferroelectric dabeere na PZT ihe enwetawo uka mmepụta, ma ya ihe bụ ekwekọghị na CMOS technology na siri ike ịda mbà, na-eduga na mmepe usoro nke omenala ferroelectric ebe nchekwa na-akpaghasị egbochi, na agbakwunyere mwekota mkpa a iche iche mmepụta akara nkwado, siri ike popularize. na nnukwu ọnụ ọgụgụ.Obere nke ebe nchekwa ferroelectric nke dabere na hafnium ọhụrụ yana ndakọrịta ya na teknụzụ CMOS na-eme ka ọ bụrụ ebe nyocha na-enwekarị nchegbu na agụmakwụkwọ na ụlọ ọrụ.A na-ahụta ebe nchekwa ferroelectric nke dabeere na Hafnium dị ka ntụziaka mmepe dị mkpa nke ọgbọ ọzọ nke ebe nchekwa ọhụrụ.Ka ọ dị ugbu a, nyocha nke ebe nchekwa ferroelectric nke hafnium ka nwere nsogbu dị ka enweghị ntụkwasị obi nkeji zuru oke, enweghị imepụta mgbawa nwere sekit okirikiri zuru oke, yana nkwenye ọzọ nke arụmọrụ ọkwa mgbawa, nke na-egbochi ngwa ya na eNVM.
N'ịchọ ihe ịma aka ndị agbakwunyere na ebe nchekwa ferroelectric nke hafnium na-eche ihu, ndị otu Academician Liu Ming sitere na Institute of Microelectronics emebela ma mejuputa mgbawa ule megab-magnitude FeRAM maka oge mbụ n'ụwa dabere na ikpo okwu njikọta buru ibu. nke ebe nchekwa ferroelectric dabere na hafnium dakọtara na CMOS, wee rụchaa nke ọma nnukwu njikọta nke HZO ferroelectric capacitor na usoro 130nm CMOS.A na-atụpụta sekit mbanye ederede na-enyere ECC aka maka ịhụ ọnọdụ okpomọkụ yana sekit amplifier nwere mmetụta maka mkpochapụ akpaaka, yana ogologo oge okirikiri 1012 na 7ns na-ede na 5ns na-agụ oge na-enweta, nke bụ ọkwa kachasị mma akọwara ugbu a.
Akwụkwọ ahụ "A 9-Mb HZO dabeere FeRAM na 1012-Cycle Endurance na 5/7ns Gụọ/Dee site na iji ECC-Assissted Data Refresh" dabere na nsonaazụ ya na Akwụsị-Kagbuo Sense Amplifier "a họọrọ na ISSCC 2023, na ahọpụtara mgbawa na Oge ngosi ngosi ISSCC ga-egosipụta na ọgbakọ ahụ.Yang Jianguo bụ onye mbụ dere akwụkwọ a, Liu Ming bụkwa onye edemede kwekọrọ.
Ọrụ metụtara ya na-akwado National Natural Science Foundation of China, National Key Research and Development Programme nke Ministry of Science and Technology, na B-Class Pilot Project nke Chinese Academy of Sciences.
(Foto nke mgbawa FeRAM nke 9Mb Hafnium na ule arụmọrụ mgbawa)
Oge nzipu: Eprel-15-2023