Ụdị mgbawa ebe nchekwa ferroelectric nke dabeere na hafnium nke Liu Ming, bụ Academician Institute of Microelectronics, ewepụtala na IEEE International Solid-State Circuits Conference (ISSCC) na 2023, ọkwa kachasị elu nke nhazi sekit agbakwunyere.
Ebe nchekwa na-adịghị agbanwe agbanwe (eNVM) dị elu na-achọsi ike maka ibe SOC na ngwa eletrọnịkị ndị ahịa, ụgbọ ala kwụụrụ onwe ya, njikwa ụlọ ọrụ na ngwaọrụ ihu maka ịntanetị nke ihe. Ebe nchekwa Ferroelectric (FeRAM) nwere uru nke ntụkwasị obi dị elu, oriri ike dị ala, yana oke ọsọ. A na-eji ya eme ihe n'ọtụtụ ndekọ data ozugbo, ịgụ na ide data ugboro ugboro, ike dị ala yana ngwaahịa SoC/SiP agbakwunyere. Ebe nchekwa Ferroelectric dabeere na PZT ihe enwetawo uka mmepụta, ma ya ihe bụ ekwekọghị na CMOS technology na siri ike ịda mbà, na-eduga na mmepe usoro nke omenala ferroelectric ebe nchekwa na-akpaghasị egbochi, na agbakwunyere mwekota mkpa a iche iche mmepụta akara nkwado, siri ike popularize na a nnukwu ọnụ ọgụgụ. Obere nke ebe nchekwa ferroelectric nke dabere na hafnium ọhụrụ yana ndakọrịta ya na teknụzụ CMOS na-eme ka ọ bụrụ ebe nyocha na-enwekarị nchegbu na agụmakwụkwọ na ụlọ ọrụ. A na-ahụta ebe nchekwa ferroelectric nke dabeere na Hafnium dị ka ntụziaka mmepe dị mkpa nke ọgbọ ọzọ nke ebe nchekwa ọhụrụ. Ka ọ dị ugbu a, nyocha nke ebe nchekwa ferroelectric nke hafnium ka nwere nsogbu dị ka enweghị ntụkwasị obi nkeji zuru oke, enweghị imepụta mgbawa nwere sekit okirikiri zuru oke, yana nkwenye ọzọ nke arụmọrụ ọkwa mgbawa, nke na-egbochi ngwa ya na eNVM.
N'ịchọ na ihe ịma aka ndị agbakwunyere na ebe nchekwa ferroelectric hafnium, ndị otu Academician Liu Ming sitere na Institute of Microelectronics emebela ma mejuputa megab-magnitude FeRAM ule mgbawa maka oge mbụ n'ụwa dabere na nnukwu njikọ njikọta nke hafnium dabeere na ferroelectric ebe nchekwa na-arụ ọrụ nke ọma na CM. capacitor na 130nm CMOS usoro. A na-atụpụta sekit mbanye ederede na-enyere ECC aka maka ịhụ ọnọdụ okpomọkụ yana sekit amplifier nwere mmetụta maka mkpochapụ akpaaka, yana ogologo oge okirikiri 1012 na 7ns na-ede na 5ns na-agụ oge na-enweta, nke bụ ọkwa kachasị mma akọwara ugbu a.
Akwụkwọ ahụ "A 9-Mb HZO dabeere na agbakwunyere FeRAM na 1012-Cycle Endurance na 5 / 7ns Read / Write site na iji ECC-Assisted Data Refresh" dabeere na nsonaazụ ya na Offset-Canceled Sense Amplifier" ahọpụtara na ISSCC 2023, na a ga-ahọrọ mgbawa ahụ na Session Demo na ogbako nke ISSCC. onye edemede mbụ nke akwụkwọ ahụ, na Liu Ming bụ onye edemede kwekọrọ.
Ọrụ metụtara ya na-akwado National Natural Science Foundation of China, National Key Research and Development Programme nke Ministry of Science and Technology, na B-Class Pilot Project nke Chinese Academy of Sciences.
(Foto nke mgbawa FeRAM nke 9Mb Hafnium na ule arụmọrụ mgbawa)
Oge nzipu: Eprel-15-2023
