SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR

Nkọwa dị mkpirikpi:

Ndị nrụpụta: Vishay
Udi ngwaahịa: MOSFET
Akwụkwọ data:SI1029X-T1-GE3
Nkọwa:MOSFET N/P-CH 60V SC89-6
Ọkwa RoHS: RoHS kwadoro


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Njirimara ngwaahịa Uru Njirimara
Onye nrụpụta: Vishay
Otu ngwaahịa: MOSFET
RoHS: Nkọwa
Teknụzụ: Si
Ụdị nrịgo: SMD/SMT
Ngwungwu/Ibe: SC-89-6
Transistor polarity: N-Channel, P-Channel
Ọnụọgụ ọwa: 2 Ọwa
Vds - Voltaji ndakpọ isi iyi: 60 V
Id - mmiri na-aga n'ihu ugbu a: 500mA
Rds On - Nguzogide mmiri-Isi iyi: 1.4 ohms, 4 ohms
Vgs - Voltaji Ọnụ ụzọ-Isi Iyi: - 20 V, + 20 V
Vgs th - Voltaji ọnụ ụzọ isi mmalite: 1 V
Qg - Ụgwọ ọnụ ụzọ ámá: 750pc, 1.7 nC
Okpomọkụ arụ ọrụ kacha nta: -55C
Okpomọkụ arụ ọrụ kacha: + 150 C
Pd - Mgbasa ike: 280mW
Ụdị ọwa: nkwalite
Aha ahia: TrenchFET
Nkwakọ ngwaahịa: Reel
Nkwakọ ngwaahịa: Bee teepu
Nkwakọ ngwaahịa: MouseReel
Akara: Vishay Semiconductors
Nhazi: Abụọ
Ntugharị n'ihu - Obere: 200mS, 100mS
Ogologo: 0,6 mm
Ogologo: 1.66 mm
Ụdị ngwaahịa: MOSFET
Usoro: SI1
Ọnụọgụ ngwugwu ụlọ ọrụ: 3000
ngalaba: MOSFET
Ụdị transistor: 1 N-Ọwa, 1 P-Ọwa
Oge igbu oge na-emekarị: 20 ns, 35 ns
Oge nkwụsịtụ na-emekarị: 15 ns, 20 ns
Obosara 1.2 mm
Akụkụ # Aha: SI1029X-GE3
Ibu nkeji: 32 mg

 


  • Nke gara aga:
  • Osote:

  • • Halogen-free Dị ka IEC 61249-2-21 nkọwa

    • TrenchFET® Ike MOSFET

    • Mpempe ukwu dị obere

    • Ngbanwe n'akụkụ dị elu

    • Nguzogide dị ala:

    N-Channel, 1.40 Ω

    P-Channel, 4 Ω

    • Ọkara ala: ± 2 V (ụdị.)

    • Ọsọ ngbanwe ngwa ngwa: 15 ns (ụdị.)

    • Isi mmalite ESD echekwara: 2000 V

    • Dabara na ntuziaka RoHS 2002/95/EC

    • Dochie Digital Transistor, Ọkwa-Ngbanwe

    • Sistemu eji arụ ọrụ batrị

    • sekit Ntụgharị Ọdụdọ Ike

    Ngwaahịa ndị emetụtara